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TFP4N60 Datasheet(PDF) 1 Page - Tak Cheong Electronics (Holdings) Co.,Ltd |
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TFP4N60 Datasheet(HTML) 1 Page - Tak Cheong Electronics (Holdings) Co.,Ltd |
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1 / 8 page  Number: DB-183 July 2011, Revision B Page 1 TAK CHEONG ® SEMICONDUCTOR N-Channel Power MOSFET 4.1A, 600V, 2.5Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. Features ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a discrete fast recovery diode. 1 = Gate 2 = Drain 3 = Source DEVICE MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (T C =25°C, unless otherwise noted ) Symbol Parameter Value Units VDSS Drain- Source Voltage 600 V VGSS Gate-Source Voltage ± 30 V ID Drain Current 4.1 A IDM Drain Current Pulsed 16.4 A Power Dissipation (Note 2) 98 W PD Derating factor above 25℃ 0.78 W/℃ EAS Single Pulsed Avalanche Energy (Note 1) 262 mJ EAR Repetitive Avalanche Energy (Note 2) 3.9 mJ TJ Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range - 55 to +150 ℃ Notes: 1. L=26mH, IAS=4.1A, VDD=50V, RG=50Ω, Starting TJ=25℃ 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RθJC Thermal Resistance, Junction-to-Case 1.28 ℃ /W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃ /W 1 2 3 TO-220AB G D S L xxyy TFP XXXX L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type |
Similar Part No. - TFP4N60 |
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Similar Description - TFP4N60 |
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