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TFP2N60 Datasheet(PDF) 2 Page - Tak Cheong Electronics (Holdings) Co.,Ltd

Part # TFP2N60
Description  N-Channel Power MOSFET 2.0A, 600V, 4.6廓
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Manufacturer  TAK_CHEONG [Tak Cheong Electronics (Holdings) Co.,Ltd]
Direct Link  http://www.takcheong.com/en/index.asp
Logo TAK_CHEONG - Tak Cheong Electronics (Holdings) Co.,Ltd

TFP2N60 Datasheet(HTML) 2 Page - Tak Cheong Electronics (Holdings) Co.,Ltd

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Number: DB-180
March 2010, Revision B
Page 2
TAK CHEONG
®
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Off Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Sounce Breakdown Voltage
VGS = 0V, ID = 250uA
600
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
--
1
uA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS (th)
Gate Threshold Voltage
VDS = VGS , ID = 250uA
2.0
--
4.0
V
RDS(ON)
On-Resistance
VGS = 10V, ID = 1.0A
--
4.0
4.6
Ω
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Ciss
Input Capacitance
--
320
380
pF
Coss
Output Capacitance
--
30
45
pF
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
3
5.6
pF
Switching Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-On Delay Time
--
13
30
nS
tr
Turn-On Rise Time
--
12
60
nS
td(off)
Turn-Off Delay Time
--
73
100
nS
tr
Turn-Off Fall Time
VDD = 300V, ID = 2.0A,
RG = 25Ω
(Note 3 & 4)
--
14.3
70
nS
Qg
Total Gate Charge
--
9.3
13
nC
Qgs
Gate-Source Charge
--
2.0
--
nC
Qgd
Gate-Drain Charge
VDS = 480V, ID = 2.0A,
VGS = 10V
(Note 3 & 4)
--
3.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min.
Typ,
Max.
Unit
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
8.0
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 2.0A
--
--
1.4
V
Trr
Reverse Recovery Time
--
230
--
nS
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.0A,
dIF / dt = 100A/uS
(Note 3)
--
1.0
--
uC
Notes:
3. Pulse Test: Pulse width
< 300us, Duty cycle ≤ 2%.
4. Basically not affected by working temperature.


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