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TFF50N06 Datasheet(PDF) 2 Page - Tak Cheong Electronics (Holdings) Co.,Ltd

Part # TFF50N06
Description  N-Channel Power MOSFET 28A, 60V, 0.023廓
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Manufacturer  TAK_CHEONG [Tak Cheong Electronics (Holdings) Co.,Ltd]
Direct Link  http://www.takcheong.com/en/index.asp
Logo TAK_CHEONG - Tak Cheong Electronics (Holdings) Co.,Ltd

TFF50N06 Datasheet(HTML) 2 Page - Tak Cheong Electronics (Holdings) Co.,Ltd

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Number: DB-230
August 2011, Revision A
Page 2
TAK CHEONG
®
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
Off Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Sounce Breakdown Voltage
VGS = 0V, ID = 250uA
60
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
--
1
uA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25V, VDS = 0V
--
--
-100
nA
On Characteristics (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS (th)
Gate Threshold Voltage
VDS = VGS , ID = 250uA
2.0
--
4.0
V
RDS(ON)
On-Resistance
VGS = 10V, ID = 25A
--
0.017
0.023
Ω
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Ciss
Input Capacitance
--
--
1460
pF
Coss
Output Capacitance
--
--
580
pF
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
90
pF
Switching Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-On Delay Time
--
50
--
nS
tr
Turn-On Rise Time
--
165
--
nS
td(off)
Turn-Off Delay Time
--
78
---
nS
tr
Turn-Off Fall Time
VDD = 30V, ID = 25A,
RG = 25Ω
(Note 4 & 5)
--
60
--
nS
Qg
Total Gate Charge
--
36
45
nC
Qgs
Gate-Source Charge
--
8.5
--
nC
Qgd
Gate-Drain Charge
VDS = 160V, ID = 50A,
VGS = 10V
(Note 4 & 5)
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min.
Typ,
Max.
Unit
IS
Continuous Drain-Source Current
--
--
28
A
ISM
Pulsed Drain-Source Current
Integral
Reverse
p-n
Junction Diode in the
MOSFET
--
--
112
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 50A
--
--
1.5
V
Trr
Reverse Recovery Time
--
95
--
nS
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 50A,
dIF / dt = 100A/uS
(Note 4)
--
250
--
uC
Notes:
4. Pulse Test: Pulse width
< 300us, Duty cycle ≤ 2%.
5. Basically not affected by working temperature.


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