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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

HMC-ALH376

v02.0209

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 35 - 45 GHz

Outline Drawing

Absolute Maximum Ratings

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. TYPICAL BOND PAD IS .004” SQUARE.

3. BACKSIDE METALLIZATION: GOLD.

4. BACKSIDE METAL IS GROUND.

5. BOND PAD METALLIZATION: GOLD.

6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

7. OVERALL DIE SIZE ±.002”

Drain Bias Voltage

+5.5 Vdc

RF Input Power (35 - 40 GHz)

-5 dBm

RF Input Power (40 - 45 GHz)

-1 dBm

Channel Temperature

180 °C

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.