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HMC-ALH102 Datasheet(PDF) 5 Page - Hittite Microwave Corporation |
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HMC-ALH102 Datasheet(HTML) 5 Page - Hittite Microwave Corporation |
5 / 6 page 1 1 - 118 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.10 Ohms Note 3: Gate bond pads (VG) exist on the upper & lower sides of the MMIC for assembly convenience. For best performance the unused pad should be attached to a 100pF cap to ground, but is not required. HMC-ALH102 v02.0209 GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz |
Similar Part No. - HMC-ALH102_09 |
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Similar Description - HMC-ALH102_09 |
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