3

3 - 5

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC968

v01.0211

GaAs pHEMT MMIC 1 WATT

POWER AMPLIFIER, 37 - 40 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+7V

rf input power (rfin)

+20 dBm

Channel Temperature

150 °C

Continuous pdiss (T= 85 °C)

(derate 15.5 mw/°C above 85 °C)

6.45w

Thermal resistance

(channel to die bottom)

10.1 °C/w

storage Temperature

-65 to +150 °C

operating Temperature

-55 to +85 °C

Vdd (V)

idd (mA)

+5.0

900

+5.5

900

+6.0

900

Note: Amplifier will operate over full voltage ranges shown

above with Vgg adjusted to achieve Idd = 900 mA

Typical Supply Current vs. Vdd

eleCTrosTATiC sensiTiVe DeViCe

oBserVe hAnDlinG preCAUTions

Power Dissipation

Gain & Power vs.

Supply Current @ 38 GHz

Gain & Power vs.

Supply Voltage @ 38 GHz

Reverse isolation vs. Temperature

-60

-50

-40

-30

-20

-10

0

36

37

38

39

40

41

+25C

+85C

-55C

FREQUENCY (GHz)

15

20

25

30

35

40

5

5.5

6

Gain

P1dB

Psat

Vdd (V)

15

20

25

30

35

40

800

900

1000

Gain

P1dB

Psat

Idd (mA)

0

1

2

3

4

5

6

7

8

9

10

0

1

2

3

4

5

6

7

8

9

10 11 12 13

37GHz

38GHz

39GHz

40GHz

INPUT POWER (dBm)