Number: DB-028

March 2010 Release, Revision F

Page 1

TAK CHEONG

®

SEMICONDUCTOR

20A SCHOTTKY BARRIER DIODE

Dual High Voltage Schottky Rectifier

Specification Features:

High Voltage Wide Range Selection, 100V, 150V & 200V

High Switching Speed Device

Low Forward Voltage Drop

Low Power Loss and High Efficiency

Guard Ring for Over-voltage Protection

High Surge Capability

RoHS Compliant

Matte Tin(Sn) Lead Finish

Terminal Leads Surface is Corrosion Resistant

and can withstand to 260°C Wave Soldering or

per MIL-STD-750, Method 2026.

DEVICE MARKING DIAGRAM

POLARITY CONFIGURATION

Symbol

Parameter

MBR20100CT

MBR20150CT

MBR20200CT

Units

Maximum Repetitive Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Reverse Voltage

100

150

200

V

Average Rectified Forward Current

Per Leg

Per Package

10

20

A

Non-repetitive Peak Forward Surge Current

8.3mS Single Phase @ Rated Load

150

A

Storage Temperature Range

-65 to +150

°C

Operating Junction Temperature

+150

°C

These ratings are limiting values above which the serviceability of the diode may be impaired.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

Maximum Thermal Resistance, Junction-to-Case

2.0

°C/W

Maximum Thermal Resistance, Junction-to-Ambient (per leg)

60

°C/W

MBR20100CT

MBR20150CT

MBR20200CT

Symbol

Parameter

Test Condition

(Note 1)

Min

Max

Min

Max

Min

Max

Units

Reverse Current

---

200

---

200

---

200

μA

Forward Voltage

---

0.85

0.95

---

0.92

1.00

---

1.00

1.25

V

Note/s:

1.

Tested under pulse condition of 300

1

2

3

TO-220AB

1. Anode

2. Cathode

3. Anode

POLARITY CONFIGURATION

L xxyy

Line 2

Line 3

Line 4

L = Tak Cheong Logo

xxyy = Monthly Date Code

Line 2 = MBR

Line 3 = 20xxxCT

Line 4 = Polarity