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BT05VG Datasheet(PDF) 1 Page - BeRex Corporation

Part # BT05VG
Description  1500-4000 MHz Wideband Drive Amplifier
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Manufacturer  BEREX [BeRex Corporation]
Direct Link  http://www.berex.com
Logo BEREX - BeRex Corporation

BT05VG Datasheet(HTML) 1 Page - BeRex Corporation

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1
1500-4000 MHz Wideband Drive Amplifier
BT05VG
OIP3 = 39.0 dBm @ 1900 MHz
Gain = 18.0 dB @ 1900 MHz
Output P1 dB = 22.5 dBm @ 1900 MHz
50 Ω Cascadable
Lead-free/RoHS-compliant SOT-89 SMT package
BeRex’s BT05VG is a high performance and a
high dynamic range amplifier in a low cost
surface mount package(SOT-89) with a RoHS
-compliant, that incorporates reliable het-
erojunction-bipolar-transistor (HBT) devices
fabricated with InGaP GaAs technology.
This device is designed for use where high
linearity is required and features high OIP3
and P1 with low consumption current
(85mA) and requires a few external match-
ing components such as a DC blocking ca-
pacitors on the In/Output pin, a bypass ca-
pacitor and a RF choke for the out port.
All devices are 100% RF/DC tested.
Product Description
Device Features
 Base station Infrastructure/RFID
 Commercial/Industrial/Military wireless system
Applications
1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.
2 OIP3 _ measured with two tones at an output of 10 dBm per tone separated by 1 MHz.
Typical Performance
1
Absolute Maximum Ratings
BeRex
● website: www.berex.com
● email: sales@berex.com
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2010 BeRex
Parameter
Frequency
Unit
1900
2100
2450
3500
MHz
Gain
18.0
16.5
15.0
13.0
dB
S11
-18.0
-35.0
-12.0
-17.0
dB
S22
-30.0
-30.0
-13.0
-18.0
dB
OIP3
2
39.0
39.0
39.0
41.0
dBm
P1dB
22.5
22.5
23.5
24.0
dBm
Noise Figure
4.6
5.0
4.6
5.0
dB
Min.
Typical
Max.
Unit
Bandwidth
1500
4000
MHz
IC @ (Vc = 5V)
75
85
95
mA
VC
5.0
V
RTH
50
°C/W
Parameter
Unit
Rating
Operating Case Temperature
°C
-40 to +85
Storage Temperature
°C
-55 to +155
Junction Temperature
°C
+220
Operating Voltage
V
+6.5
Supply Current
mA
180
Input RF Power
dBm
23
*Operation of this device above any of these parameters may result in permanent damage.
Application Circuits
*external matching circuit: refer to the page 5 to 11.
Rev. C
RF Choke
RF In
RF Out
Vcc
BT05VG
DC
Block
Bypass
DC
Block


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