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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

HMC619LP5 / 619LP5E

v07.0908

General Description

Features

Functional Diagram

Typical Applications

GaAs PHEMT MMIC

POWER AMPLIFIER, DC - 10 GHz

The HMC619LP5(E)

is a GaAs MMIC PHEMT

Distributed Power Amplifier die which operates bet-

ween DC and 10 GHz. The amplifier provides 11 dB

of gain, +37 dBm output IP3 and +27 dBm of output

power at 1 dB gain compression while requiring 300

mA from a +12V supply. Gain flatness is excellent at

±0.5 dB from DC - 10 GHz making the HMC619LP5(E)

ideal for EW, ECM, Radar and test equipment

applications. The HMC619LP5(E) amplifier I/Os are

internally matched to 50 ohms.

P1dB Output Power: +27 dBm

Gain: 11 dB

Output IP3: +37 dBm

Supply Voltage: +12V @ 300 mA

50 Ohm Matched Input/Output

The HMC619LP5(E) wideband PA is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military & Space

• Test Instrumentation

• Fiber Optics

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

Frequency Range

DC - 2.0

2.0 - 8.0

8.0 - 10.0

GHz

Gain

10

12

9

11

8

10.5

dB

Gain Flatness

±0.5

±0.25

±0.5

dB

Gain Variation Over Temperature

0.016

0.02

0.03

dB/ °C

Input Return Loss

11

12.5

17

dB

Output Return Loss

16

16

12

dB

Output Power for 1 dB Compression (P1dB)

28

25

27

23

25

dBm

Saturated Output Power (Psat)

29

28

25.5

dBm

Output Third Order Intercept (IP3)

41

37

32

dBm

Noise Figure

5

5

7

dB

Supply Current

(Idd) (Vdd= +12V, Vgg1= -0.8V Typ.)

300

300

300

mA

* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.