2

2 - 4

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

Outline Drawing

Absolute Maximum Ratings

noTes:

1. All dimensions in inches [millimeTers]

2. no connecTion reQUired for UnlAbeled bond pAds

3. die Thickness is 0.004 (0.100)

4. TYpicAl bond pAd is 0.004 (0.100) sQUAre

5. bAckside meTAlliZATion: gold

6. bAckside meTAl is groUnd

7. bond pAd meTAliZATion: gold

drain bias voltage (vdd)

+9v

gate bias voltage (vgg1)

-2 to 0v

gate bias current (igg1)

+3.2mA

gate bias voltage (vgg2)

(vdd -8) v to +3 vdc

gate bias current (igg2)

+3.2mA

rf input power (rfin)(vdd = +8v)

+23 dbm

channel Temperature

175 °c

continuous pdiss (T = 85 °c)

(derate 24 mW/°c above 85 °c)

2.17 W

Thermal resistance

(channel to die bottom)

41.5 °c/W

storage Temperature

-65 to +150 °c

operating Temperature

-55 to +85 °c

vdd (v)

idd (mA)

+7.5

161

+8.0

160

+8.5

159

Typical Supply Current vs. Vdd

elecTrosTATic sensiTive device

observe hAndling precAUTions

standard

Alternate

gp-1 (gel pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

HMC465

v06.1209

GaAs pHEMT MMIC MODULATOR

DRIVER AMPLIFIER, DC - 20 GHz