For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

7

7 - 4

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+9V

Gate Bias Voltage (Vgg1)

-2 to 0V

Gate Bias Current (igg1)

2.5 mA

Gate Bias Voltage (Vgg2)(AGC)

(Vdd -9) Vdc to +2V

rf input power (rfiN)(Vdd = +5V)

+18 dBm

Channel Temperature

150 °C

Continuous pdiss (T= 85 °C)

(derate 19.1 mw/°C above 85 °C)

1.24 w

Thermal resistance

(channel to ground paddle)

52.3 °C/w

storage Temperature

-65 to +150 °C

operating Temperature

-40 to +85 °C

Vdd (V)

idd (mA)

+4.5

58

+5.0

60

+5.5

62

Typical Supply Current vs. Vdd

Gain @ Several Control Voltages (Vgg2)

-12

-7

-2

3

8

13

18

0

2

4

6

8

10

12

14

16

18

20

22

Vgg2 = -1.3V

Vgg2 = -1.2V

Vgg2 = -1.1V

Vgg2 = -1.0V

Vgg2 = -0.9V

Vgg2 = -0.8V

Vgg2 = -0.6V

Vgg2 = -0.4V

Vgg2 = -0.2V

Vgg2 = 0V

FREQUENCY (GHz)

eleCTrosTATiC seNsiTiVe DeViCe

oBserVe HANDliNG preCAUTioNs

HMC463LP5 / 463LP5E

v08.0511

GaAs pHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2 - 20 GHz