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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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SPDT NON-REFLECTIVE

SWITCH, DC - 4 GHz

v05.0110

General Description

Features

Functional Diagram

High Isolation: 60 dB @ 1 GHz

50 dB @ 2 GHz

Positive Control: 0/+5V

Input IP3: 51 dBm

Non-Reflective Design

Typical Applications

The HMC435MS8G(E) is ideal for:

• Basestations & Repeaters

• Cellular/3G and WiMAX/4G

• Infrastructure and Access Points

• CATV/CMTS

• Test Instrumentation

The HMC435MS8G(E) is a non-reflective DC to

4 GHz GaAs MESFET SPDT switch in a low cost 8

lead MSOP8G surface mount package with exposed

ground paddle. The switch is ideal for cellular/3G

and WiMAX/4G applications yielding up to 60 dB

isolation, low 0.8 dB insertion loss and +50 dBm

input IP3. Power handling is excellent up through the

3.8 GHz WiMAX band with the switch offering a P1dB

compression of +31 dBm. On-chip circuitry allows

positive voltage control of 0/+5 Volts at very low DC

currents.

0/+5 Vdc, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

Insertion Loss

DC - 2.5 GHz

DC - 3.6 GHz

DC - 4.0 GHz

0.8

1.2

1.5

1.0

1.5

1.8

dB

dB

dB

Isolation (RFC to RF1/RF2)

DC - 1.0 GHz

DC - 2.0 GHz

DC - 2.5 GHz

DC - 3.6 GHz

DC - 4.0 GHz

56

46

43

37

30

60

50

47

41

35

dB

dB

dB

dB

dB

Return Loss (On State)

DC - 2.5 GHz

DC - 3.6 GHz

DC - 4.0 GHz

15

13

11

20

17

15

dB

dB

dB

Return Loss (Off State)

0.5 - 4.0 GHz

16

21

dB

Input Power for 1 dB Compression

0.5 - 4.0 GHz

27

31

dBm

Input Third Order Intercept

(Two-Tone Input Power = +7 dBm Each Tone)

0.5 - 1.0 GHz

0.5 - 2.5 GHz

0.5 - 4.0 GHz

48

45

41

51

48

45

dBm

Switching Speed

DC - 4.0 GHz

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

40

60

ns

ns