3

3 - 5

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+5.5 Vdc

RF Input Power (RFIN)(Vdd = +5.0 Vdc)

+10 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 9.9 mW/°C above 85 °C)

0.89 W

Thermal Resistance

(channel to die bottom)

101.0 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

ESD Sensitivity (HBM)

Class 1A

Vdd (V)

Idd (mA)

+4.5

100

+5.0

101

+5.5

102

Typical Supply Current vs. Vdd

Note: Amplifier will operate over full voltage ranges shown above

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

HMC383

v02.0907

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 12 - 30 GHz

Outline Drawing

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND PAD IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

8. OVERALL DIE SIZE ± .002