10

10 - 214

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

HMC347C8

GaAs MMIC SMT HIGH ISOLATION

SPDT SWITCH, DC - 8 GHz

v01.0404

General Description

Features

Functional Diagram

The HMC347C8 is a broadband high isolation non-

reflective GaAs MESFET SPDT switch in a non-

hermetic surface mount ceramic package. Covering

DC to 8 GHz, the switch features >50 dB isolation

up to 2 GHz and >35 dB isolation up to 8 GHz. The

switch

operates

using

complementary

negative

control voltage logic lines of -5/0V and requires no

bias supply. This SPDT is an excellent replacement

for the HMC132C8 SPDT.

Isolation: 50 dB @ 2.5 GHz

36 dB @ 8 GHz

Insertion Loss: 2 dB Typical

Non-Reflective Design

Surface Mount Ceramic Package

Typical Applications

The HMC347C8 is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military Radios, Radar & ECM

• Test Instrumentation

Parameter

Frequency

Min.

Typ.

Max.

Units

Insertion Loss

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

1.7

2.0

2.4

2.0

2.4

2.8

dB

dB

dB

Isolation

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

49

35

32

54

40

36

dB

dB

dB

Return Loss

“On State”

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

10

7

6

13

10

9

dB

dB

dB

Return Loss RF1, RF2

“Off State”

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

9

6

6

dB

dB

dB

Input Power for 1 dB Compression

0.5 - 8.0 GHz

19

23

dBm

Input Third Order Intercept

(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)

0.5 - 8.0 GHz

38

43

dBm

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

DC - 8.0 GHz

3

6

ns

ns