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InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 8 GHz

v02.1108

General Description

Features

Functional Diagram

The HMC311SC70(E) is a GaAs InGaP Heterojunction

Bipolar Transistor (HBT) Gain Block MMIC SMT

DC to 8 GHz amplifier. Packaged in an industry

standard SC70, the amplifier can be used as either

a cascadable 50 Ohm gain stage or to drive the LO

port of HMC mixers with up to +15 dBm output power.

The HMC311SC70(E) offers 15 dB of gain and an

output IP3 of +30 dBm while requiring only 54 mA

from a +5V supply. The Darlington topology results in

reduced sensitivity to normal process variations, and

yields excellent gain stability over temperature while

requiring

a

minimal

number

of

external

bias

components.

P1dB Output Power: +15 dBm

Output IP3: +30 dBm

Gain: 15 dB

Cascadable, 50 Ohm I/O’s

Single Supply: +5V

Industry Standard SC70 Package

Typical Applications

The HMC311SC70(E) is ideal for:

• Cellular / PCS / 3G

• WiBro / WiMAX / 4G

• Fixed Wireless & WLAN

• CATV & Cable Modem

• Microwave Radio & Test Equipment

Parameter

Min.

Typ.

Max.

Units

Gain

DC - 1.0 GHz

1.0 - 4.0 GHz

4.0 - 6.0 GHz

6.0 - 8.0 GHz

14.0

13.0

12.5

11.0

15.0

15.0

14.5

13.0

dB

dB

dB

dB

Gain Variation Over Temperature

DC - 1.0 GHz

1.0 - 4.0 GHz

4.0 - 6.0 GHz

6.0 - 8.0 GHz

0.004

0.007

0.012

0.018

0.007

0.012

0.016

0.022

dB/ °C

dB/ °C

dB/ °C

Return Loss Input / Output

DC - 8.0 GHz

15

dB

Reverse Isolation

DC - 8.0 GHz

18

dB

Output Power for 1 dB Compression (P1dB)

DC - 2.0 GHz

2.0 - 4.0 GHz

4.0 - 6.0 GHz

6.0 - 8.0 GHz

13.5

12.0

10.0

8.0

15.5

15.0

13.0

11.0

dBm

dBm

dBm

dBm

Output Third Order Intercept (IP3)

DC - 2.0 GHz

2.0 - 6.0 GHz

6.0 - 8.0 GHz

30

27

24

dBm

dBm

dBm

Noise Figure

DC - 8.0 GHz

5

dB

Supply Current (Icq)

55

74

mA

Note: Data taken with broadband bias tee on device output.