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STGW45HF60WDI Datasheet(PDF) 4 Page - STMicroelectronics |
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STGW45HF60WDI Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 16 page  Electrical characteristics STGW45HF60WDI 4/16 Doc ID 16091 Rev 2 2 Electrical characteristics (TJ = 25 °C unless otherwise specified). Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC= 30 A VGE = 15V, IC = 30 A,TJ= 125 °C 1.9 1.65 2.5 V V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TJ = 125 °C 500 5 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V ± 100 nA Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 2900 260 55 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 400 V, IC = 30 A, VGE = 15 V Figure 18 - 160 17 65 - nC nC nC Table 6. Switching off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A, RGE = 4.7 Ω, VGE = 15 V Figure 17 - 30 145 50 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 400 V, IC = 30 A, RGE = 4.7 Ω, VGE =15 V, TJ = 125 °C Figure 17 - 47 185 65 - ns ns ns |
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