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PB1001S Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # PB1001S
Description  Silicon-Bridge-Rectifiers
Download  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

PB1001S Datasheet(HTML) 1 Page - Diotec Semiconductor

  PB1001S Datasheet HTML 1Page - Diotec Semiconductor PB1001S Datasheet HTML 2Page - Diotec Semiconductor  
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PB1000 ... PB1010, PB1000S ... PB1010S
PB1000 ... PB1010, PB1000S ... PB1010S
Silicon-Bridge-Rectifiers
Silizium-Brückengleichrichter
Version 2011-03-22
Type: PB...
Type: PB...S
Dimensions - Maße [mm]
Nominal current – Nennstrom
10 A
Alternating input voltage
Eingangswechselspannung
35...700 V
Type: PB...
19 x 19 x 6.8 [mm]
Plastic case – Kunststoffgehäuse
Weight approx. – Gewicht ca.
5.5 g
Type: PB...S
15.1 x 15.1 x 6.3 [mm]
Plastic case with Al-bottom –
Kunststoffgehäuse mit Alu-Boden
Weight approx. – Gewicht ca.
3.5 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging bulk
Standard Lieferform lose im Karton
Recognized Product – Underwriters Laboratories Inc.® File E175067
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067
Maximum ratings
Grenzwerte
Type
Typ
Max. alternating input voltage
Max. Eingangswechselspannung
VVRMS [V]
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
PB1000 / PB1000S
35
50
PB1001 / PB1001S
70
100
PB1002 / PB1002S
140
200
PB1004 / PB1004S
280
400
PB1006 / PB1006S
420
600
PB1008 / PB1008S
560
800
PB1010 / PB1010S
700
1000
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
50 A 2)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
135/150 A 1)
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
93 A2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
1
Per diode – Pro Diode
2
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
19±0.2
Ø 3.9
6.8±0.2
1.2
12.7±0.3
_
Ø 3.6
1.0
6.3
±0.5
10.9
±0.5
15.1±0.2


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