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PB1001S Datasheet(PDF) 1 Page - Diotec Semiconductor |
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PB1001S Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page PB1000 ... PB1010, PB1000S ... PB1010S PB1000 ... PB1010, PB1000S ... PB1010S Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2011-03-22 Type: PB... Type: PB...S Dimensions - Maße [mm] Nominal current – Nennstrom 10 A Alternating input voltage Eingangswechselspannung 35...700 V Type: PB... 19 x 19 x 6.8 [mm] Plastic case – Kunststoffgehäuse Weight approx. – Gewicht ca. 5.5 g Type: PB...S 15.1 x 15.1 x 6.3 [mm] Plastic case with Al-bottom – Kunststoffgehäuse mit Alu-Boden Weight approx. – Gewicht ca. 3.5 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging bulk Standard Lieferform lose im Karton Recognized Product – Underwriters Laboratories Inc.® File E175067 Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067 Maximum ratings Grenzwerte Type Typ Max. alternating input voltage Max. Eingangswechselspannung VVRMS [V] Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) PB1000 / PB1000S 35 50 PB1001 / PB1001S 70 100 PB1002 / PB1002S 140 200 PB1004 / PB1004S 280 400 PB1006 / PB1006S 420 600 PB1008 / PB1008S 560 800 PB1010 / PB1010S 700 1000 Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 50 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 93 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+150°C 1 Per diode – Pro Diode 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 19±0.2 Ø 3.9 6.8±0.2 1.2 12.7±0.3 _ Ø 3.6 1.0 6.3 ±0.5 10.9 ±0.5 15.1±0.2 |
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