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MS40 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MS40 Datasheet(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page  MS40 ... MS500 Characteristics Kennwerte Max. average forward rectified current Dauergrenzstrom TA = 50°C R-load C-load IFAV IFAV 0.5 A 1) 0.4 A 1) Forward voltage – Durchlass-Spannung Tj = 25°C IF = 0.5 A VF < 1.2 V 2) Leakage current – Sperrstrom Tj = 25°C VR = VRRM IR < 10 µA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 70 K/W1) Type Typ Recomm. protective resistance Empf. Schutzwiderstand Rt [Ω] 3) Admiss. load capacitor at Rt Zul. Ladekondensator mit Rt CL [µF] 4) MS40 4.00 1250 0.005 MS80 8.00 625 0.005 MS125 12.50 400 0.005 MS250 30.00 166 0.005 MS380 40.00 125 0.005 MS500 50.00 100 0.005 1 Mounted on P.C. Board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Valid per diode – Gültig pro Diode 3 Rt = VRRM / IFSM Rt is the equivalent resistance of any protective element which ensures that IFSM is not exceeded Rt ist der Ersatzwiderstand eines jeglichen Schutzelementes, welches ein Überschreiten von IFSM verhindert 4 CL = 5 ms / Rt If the Rt CL time constant is less than a quarter of the 50Hz mains period, CL can be charged completely in a single half wave of the mains. Hence, IFSM occurs as a single pulse only! Falls die Rt CL Zeitkonstante kleiner ist als ¼ der 50Hz-Netzperiode, kann CL innerhalb einer einzigen Netzhalbwelle komplett geladen werden. IFSM tritt dann nur als Einzelpuls auf! 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current versus ambient temperature Zul. Richtstrom in Abh. von der Umgebungstemp. 150 100 50 0 [°C] T A 120 100 80 60 40 20 0 [%] I FAV 10 10 1 10 10 2 -1 -2 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0.4 0.8 1.0 1.2 1.4 1.8 [V] V F T = 25°C j T = 125°C j 20a-(0.5a-1.2v) R t 3) C L 4) ~ ~ + _ |
Similar Part No. - MS40_11 |
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Similar Description - MS40_11 |
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