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MMBT3906 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MMBT3906 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page MMBT3906 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - VCEsat - VCEsat – – – – 0.25 V 0.4 V Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - VBEsat - VBEsat 0.65 V – – – 0.85 V 0.95 V Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 30 V, - VEB = 3 V - ICEX – – 50 nA Emitter-Base cutoff current – Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V IEBV – –- 50 nA Gain-Bandwidth Product – Transitfrequenz - IC = 10 mA, - VCE = 20 V, f = 100 MHz fT 250 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 5 V, IE = ie = 0, f = 1 MHz CCBO – – 4.5 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 10 pf Noise figure – Rauschzahl - VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz F – – 4 dB Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time - VCC = 3 V, - VBE = 0.5 V - IC = 10 mA, - IB1 = 1mA td – – 35 ns tr – – 35 ns storage time fall time - VCC = 3 V, - IC = 10 mA, - IB1 = IB2 = 1 mA ts – – 225 ns tf – – 75 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren MMBT3904 Marking - Stempelung MMBT3906 = 2A or 3E 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG |
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