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GBU6J Datasheet(PDF) 2 Page - Diotec Semiconductor

Part # GBU6J
Description  Silicon-Bridge-Rectifiers
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

GBU6J Datasheet(HTML) 2 Page - Diotec Semiconductor

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GBU6A ... GBU6M
Characteristics
Kennwerte
Max. rectified current without cooling fin
Dauergrenzstrom ohne Kühlblech
TA = 50°C
R-load
C-load
IFAV
IFAV
4.2 A 1)
3.4 A 1)
Max. rectified current with cooling fin 300 cm²
Dauergrenzstrom mit Kühlblech 300 cm2
TA = 50°C
R-load
C-load
IFAV
IFAV
6.0 A
4.8 A
Forward voltage – Durchlass-Spannung
Tj = 25°C
IF = 6 A
VF
< 1.0 V 2)
Leakage current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 10 µA
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
< 3.3 K/W
Type
Typ
Max. admissible load capacitor
Max. zulässiger Ladekondensator
CL [µF]
Min. required protective resistor
Min. erforderl. Schutzwiderstand
Rt [Ω]
GBU6A
20000
0.25
GBU6B
10000
0.5
GBU6D
5000
1.0
GBU6G
2500
2.0
GBU6J
1500
3.0
GBU6K
1000
4.0
GBU6M
800
5.5
1
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
Valid per diode – Gültig pro Diode
2
http://www.diotec.com/
© Diotec Semiconductor AG
Rated forward current versus ambient temperature
Zul. Richtstrom in Abh. von der Umgebungstemp.
I
FAV
[%]
120
100
80
60
40
20
0
[°C]
T
A
150
100
50
0
10
10
10
1
10
3
2
-1
[A]
I
F
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
T = 25°C
j
T = 125°C
j
250a-(7.5a-1,05v)


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