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FX2000B Datasheet(PDF) 1 Page - Diotec Semiconductor |
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FX2000B Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page FX2000A ... FX2000G FX2000A ... FX2000G Superfast Silicon Rectifier Diodes Superschnelle Silizium-Gleichrichterdioden Version 2010-06-23 Dimensions - Maße [mm] Nominal Current Nennstrom 20 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...400 V Plastic case Kunststoffgehäuse Ø 8 x 7.5 [mm] Weight approx. Gewicht ca. 2.0 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] FX2000A 50 50 FX2000B 100 100 FX2000D 200 200 FX2000G 400 400 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 50°C IFAV 20 A 1) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 80 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 375/390 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 680 A2s Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+150°C +200°C Storage temperature – Lagerungstemperatur TS -50...+175°C 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 1.6±0.05 Ø 8±0.1 |
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