http://www.sanken-ele.co.jp

FMXS-4202S

June, 2011

Fast Recovery Diode

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no

responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.

Copy Right: SANKEN ELECTRIC CO.,LTD.

Page 2

SANKEN ELECTRIC

No.

Item

Symbol

Unit

Rating

Conditions

1

Transient Peak Reverse Voltage

V

200

2

Peak Reverse Voltage

V

200

3

Average Forward Current

A

20

4

Peak Surge Forward Current

A

150

10msec.

Half sinewave, one shot

5

I

112.5

1msec ≤ t ≤ 10msec

6

Junction Temperature

°C

-40∼+150

7

Storage Temperature

°C

-40∼+150

No.1,2,4&5 show ratings per one chip.

No.

Item

Symbol

Unit

Value

Conditions

1

Forward Voltage Drop

V

1.05 max.

2

Reverse Leakage Current

uA

50 max.

3

Reverse

Leakage

Current

Under High Temperature

mA

30 max.

4

Reverse Recovery Time

trr1

ns

30 max.

trr2

ns

25 max.

5

Thermal Resistance

°C /W

2.0 max.

Between Junction and case

No.1,2,3&4 show characteristics per one chip.