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BC859 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # BC859
Description  Surface Mount General Purpose Si-Epi-Planar Transistors
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC859 Datasheet(HTML) 1 Page - Diotec Semiconductor

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BC856 ... BC860
BC856 ... BC860
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
PNP
Version 2011-07-11
Dimensions - Maße [mm]
1 = B
2 = E
3 = C
Power dissipation – Verlustleistung
250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC856
BC857
BC860
BC858
BC859
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
65 V
45 V
30 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
80 V
50 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5 V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
Group A
Group B
Group C
HFE
hFE
hFE
90
150
270
- VCE = 5 V, - IC = 2 mA
Group A
Group B
Group C
HFE
hFE
hFE
125
220
420
180
290
520
250
475
800
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
- VCEsat
- VCEsat
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
- VBEsat
- VBEsat
700 mV
900 mV
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1.1
0.4
2.9 ±0.1
1
2
3
Type
Code
1.9


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