2N4403 datasheet(2/2 Pages) DIOTEC

Part #	2N4403

Description	General Purpose Si-Epitaxial Planar Transistors

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Manufacturer	DIOTEC [Diotec Semiconductor]

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2N4403

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

- IC = 150 mA, - IB = 15 mA

- IC = 500 mA, - IB = 50 mA

- VCEsat

–

0.40 V

0.75 V

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

- IC = 150 mA, - IB = 15 mA

- IC = 500 mA, - IB = 50 mA

- VBEsat

0.75 V

–

0.95 V

1.3 V

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

- VCE = 35 V, - VEB = 0,4 V

- ICEX

–

100 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VCE = 35 V, - VEB = 0,4 V

- IEBV

–

–-

100 nA

Gain-Bandwidth Product – Transitfrequenz

- IC = 20 mA, - VCE = 10 V, f = 100 MHz

fT

200 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 5 V, IE = ie = 0, f = 1 MHz

CCBO

–

8.5 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

–

30 pf

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

storage time

fall time

- ICon = 10 mA

- IBon = 1 mA

IBoff = 1 mA

td

–

15 ns

tr

–

20 ns

ts

–

225 ns

tf

–

30 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

2N4401

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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