Hi-Speed USB-to-SD Card

Readers with Bypass

6

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PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

DC CHARACTERISTICS

SE Receiver Input High

2.0

V

SE Receiver Input Low

0.8

V

Differential Common-Mode

Voltage

0.8

2.0

V

Receiver Differential Input

Sensitivity

0.2

V

Transmitter High

Ω connected to GND

2.8

3.6

V

Transmitter Low

Ω connected to 3.3V

0

0.3

V

Transmitter Output Signal

Crossover Voltage

(Note 6)

1.3

2.0

V

Bus Pullup Resistor on Upstream

Facing Port (Idle Bus)

0.900

1.25

1.575

k

Ω

Bus Pullup Resistor on Upstream

Facing Port (Upstream Port

Receiving)

1.425

2.5

3.090

k

Ω

Input Impedance

300

k

Ω

Termination Voltage for Upstream

V

AC CHARACTERISTICS

Rise Time

420

ns

Fall Time

420

ns

Differential Rise and Fall Time

Matching

(Note 6)

90

111.11

%

Full-Speed Data Rate

11.994

12.030

Mbps

USB FULL-SPEED SOURCE ELECTRICAL CHARACTERISTICS

Note 3: On-resistance is measured by applying voltage and current on the SD card interface (CCLK1, CCMD1, CDAT1_[3:0],

CCLK2, CCMD2, CDAT2_[3:0]).

Note 4: Off-capacitance measured with SD switch open (CCLK1, HCLK1, CCMD1, HCMD1, CDAT1_[3:0], HDAT1_[3:0], CCLK2,

HCLK2, CCMD2, HCMD2, CDAT2_[3:0], HDAT2_[3:0]).

Note 5: On-capacitance measured on SD card side (CCLK1, CCMD1, CDAT1_[3:0], CCLK2, CCMD2, CDAT2_[3:0]).

Note 6: Specifications guaranteed by design.