PT510 datasheet(3/4 Pages) SHARP

Part #	PT510

Description	TO-18 Type Narrow Acceptance Phototransistor

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Manufacturer	SHARP [Sharp Corporation]

Direct Link	http://sharp-world.com/

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Irradiance E e ( mW/cm

2 )

02468

10

0

5

10

15

20

RBE =

500k

Ω

300k

Ω

200k

Ω

100k

Ω

50k

Ω

Collector-emitter voltage V CE (V)

02468

10

12

14

16

18

20

0

2

4

6

8

10

12

14

16

18

20

22

24

26

T a = 25˚C

PC (MAX.)

Ee

7.5mW/cm2

5mW/cm2

2.5mW/cm2

Collector-emitter voltage V CE (V)

02468

10

0

2

4

6

8

10

12

14

T a = 25˚C

PC (MAX.)

IB =10 µ A

9

µ A

8

µ A

7

µ A

6

µ A

5

µ A

4

µ A

3

µ A

2

µ A

1

µ A

Wavelength

λ ( nm )

400

600

800

1000

1200

0

20

40

60

80

100

T a = 25˚C

L ( k Ω )

1

10

100

0.1

0.2

0.5

2

5

10

1

2

5

20

50

200

Base resistance R BE ( k Ω )

100

1000

1

10

20

50

200

500

2000

5000 10000

0.1

0.2

0.5

2

5

20

tr

tf

td

t s

PT501/PT510

(PT510 )

(PT501 )

(PT510 )

VCE =5V

T a = 25˚C

VCE =2V

IC = 2mA

T a = 25˚C

VCE =2V

IC = 2mA

T a = 25˚C

t f

t r

Fig.4-b Collector Current vs. Irradiance

Fig.5-a Collector Current vs.

Collector-emitter Voltage

Fig. 6 Spectral Sensitivity

Fig.5-b Collector Current vs.

Collector-emitter Voltage

Fig. 8 Response Time vs. Base Resistance

= 10mW/cm2

Fig. 7 Response Time vs. Load Resistance

Load resistance R

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