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BYW27-50 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # BYW27-50
Description  Silicon Rectifier Diodes - Silizium-Gleichrichterdioden
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BYW27-50 Datasheet(HTML) 1 Page - Diotec Semiconductor

  BYW27-50_09 Datasheet HTML 1Page - Diotec Semiconductor BYW27-50_09 Datasheet HTML 2Page - Diotec Semiconductor  
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BYW27-50 ... BYW27-1000
BYW27-50 ... BYW27-1000
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2009-10-16
Dimensions - Maße [mm]
Nominal current
Nennstrom
1 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...1000 V
Plastic case
Kunststoffgehäuse
DO-41
DO-204AL
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
BYW27-50
50
50
BYW27-100
100
100
BYW27-200
200
200
BYW27-400
400
400
BYW27-600
600
600
BYW27-800
800
800
BYW27-1000
1000
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
TA = 100°C
IFAV
IFAV
1 A 1)
0.8 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
10 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
50/55 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
12.5 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 0.77±0.07
Ø 2.6
-0.1


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