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BYW27-50 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BYW27-50 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BYW27-50 ... BYW27-1000 BYW27-50 ... BYW27-1000 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Dimensions - Maße [mm] Nominal current Nennstrom 1 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse DO-41 DO-204AL Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BYW27-50 50 50 BYW27-100 100 100 BYW27-200 200 200 BYW27-400 400 400 BYW27-600 600 600 BYW27-800 800 800 BYW27-1000 1000 1000 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 75°C TA = 100°C IFAV IFAV 1 A 1) 0.8 A 1) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 10 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 50/55 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 12.5 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+175°C -50...+175°C 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 0.77±0.07 Ø 2.6 -0.1 |
Similar Part No. - BYW27-50_09 |
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Similar Description - BYW27-50_09 |
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