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2SC2712 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC2712 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2712 Document number: BL/SSSTC021 www.galaxycn.com Rev.A 1 FEATURES Low noise:NF=1dB (Typ.),10 dB(Max). Complementary to 2SA1162. High voltage and high current. High hFE linearity. APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC2712 LO▪/LY▪/LG▪/LL▪ SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~125 ℃ Pb Lead-free |
Similar Part No. - 2SC2712_07 |
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Similar Description - 2SC2712_07 |
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