KGT12N120NDH datasheet(2/5 Pages) KEC

Part #	KGT12N120NDH

Description	High speed switching

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2 / 5 page

2011. 8. 30

2/7

KGT12N120NDH

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Collector-Emitter Breakdown Voltage

BVCES

VGE=0V , IC=1.0mA

1200

-

V

Collector Cut-off Current

ICES

VGE=0V, VCE=1200V

-

1.0

mA

Gate Leakage Current

IGES

VCE=0V, VGE=±20V

-

±100

nA

Gate Threshold Voltage

VGE(th)

VGE=VCE, IC=12mA

4.5

6.0

7.5

V

Collector-Emitter Saturation Voltage

VCE(sat)

VGE=15V, IC=12A

-

2.0

2.5

V

VGE=15V, IC=12A, TC = 125℃

-

2.35

-

V

VGE=15V, IC=24A

-

2.6

-

V

Dynamic

Total Gate Charge

Qg

VCC=600V, VGE=15V, IC= 12A

-

70

100

nC

Gate-Emitter Charge

Qge

-

9

-

nC

Gate-Collector Charge

Qgc

-

40

-

nC

Turn-On Delay Time

td(on)

VCC=600V, IC=12A, VGE=15V,RG=10Ω

Inductive Load, TC = 25℃ (Note1)

-

30

-

ns

Rise Time

tr

-

18

-

ns

Turn-Off Delay Time

td(off)

-

100

-

ns

Fall Time

tf

-

135

-

ns

Turn-On Switching Loss

Eon

-

1.7

-

mJ

Turn-Off Switching Loss

Eoff

-

0.5

-

mJ

Total Switching Loss

Ets

-

3.0

-

mJ

Turn-On Delay Time

td(on)

VCC=600V, IC=12A, VGE=15V, RG=10Ω

Inductive Load, TC = 125℃ (Note1)

-

30

-

ns

Rise Time

tr

-

20

-

ns

Turn-Off Delay Time

td(off)

-

110

-

ns

Fall Time

tf

-

250

-

ns

Turn-On Switching Loss

Eon

-

2.0

-

mJ

Turn-Off Switching Loss

Eoff

-

1.0

-

mJ

Total Switching Loss

Ets

-

3.5

-

mJ

Input Capacitance

Cies

VCE=30V, VGE=0V, f=1MHz

-

1100

-

pF

Ouput Capacitance

Coes

-

50

-

pF

Reverse Transfer Capacitance

Cres

-

30

-

pF

Marking

Note 1 : Energy loss include tail current and diode reverse recovery.

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