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KGT12N120NDH Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KGT12N120NDH Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 5 page 2011. 8. 30 2/7 KGT12N120NDH Revision No : 0 ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1.0mA 1200 - - V Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA Gate Threshold Voltage VGE(th) VGE=VCE, IC=12mA 4.5 6.0 7.5 V Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=12A - 2.0 2.5 V VGE=15V, IC=12A, TC = 125℃ - 2.35 - V VGE=15V, IC=24A - 2.6 - V Dynamic Total Gate Charge Qg VCC=600V, VGE=15V, IC= 12A - 70 100 nC Gate-Emitter Charge Qge - 9 - nC Gate-Collector Charge Qgc - 40 - nC Turn-On Delay Time td(on) VCC=600V, IC=12A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ (Note1) - 30 - ns Rise Time tr - 18 - ns Turn-Off Delay Time td(off) - 100 - ns Fall Time tf - 135 - ns Turn-On Switching Loss Eon - 1.7 - mJ Turn-Off Switching Loss Eoff - 0.5 - mJ Total Switching Loss Ets - 3.0 - mJ Turn-On Delay Time td(on) VCC=600V, IC=12A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ (Note1) - 30 - ns Rise Time tr - 20 - ns Turn-Off Delay Time td(off) - 110 - ns Fall Time tf - 250 - ns Turn-On Switching Loss Eon - 2.0 - mJ Turn-Off Switching Loss Eoff - 1.0 - mJ Total Switching Loss Ets - 3.5 - mJ Input Capacitance Cies VCE=30V, VGE=0V, f=1MHz - 1100 - pF Ouput Capacitance Coes - 50 - pF Reverse Transfer Capacitance Cres - 30 - pF Marking Note 1 : Energy loss include tail current and diode reverse recovery. |
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