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S8050-D Datasheet (HTML) - Micro Commercial Components

Part No. S8050-D
Description  NPN Silicon Transistors
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Maker  MCC [Micro Commercial Components]
Homepage  http://www.mccsemi.com
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NPN Silicon
Transistors
TO-92
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25
OC) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
OC to +150OC
Marking : S8050
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
40
---
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
25
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=40Vdc, IE=0)
---
0.1
uAdc
ICEO
Collector Cutoff Current
(VCE=20Vdc, IB=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=3.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=50mAdc, VCE=1.0Vdc)
85
300
---
hFE(2)
DC Current Gain
(IC=500mAdc, VCE=1.0Vdc)
50
---
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
0.6
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
1.2
Vdc
VEB
Base- Emitter Voltage
(IE=100mAdc)
---
1.4
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=20mAdc, VCE=6.0Vdc, f=30MHz)
150
---
MHz
CLASSIFICATION OF HFE (1)
Rank
Range
E
B
C
A
E
B
C
D
G
Revision:
A
20
11/01/01
 omponents
20736 Marilla
Street Chatsworth

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MCC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.0
96
.104
2.44
2.64
TM
Micro Commercial Components
120-200
C
B
D
85-150
160-300
www.mccsemi.com
1 of 2
S8050-B
S8050-C
S8050-D
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1



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