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STU8N65M5 Datasheet(PDF) 8 Page - STMicroelectronics |
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STU8N65M5 Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 25 page Electrical characteristics STB/D/F/I/P/U8N65M5 8/25 Doc ID 16531 Rev 3 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Switching losses vs gate resistance (1) Figure 17. Normalized BVDSS vs temperature 1. Eon including reverse recovery of a SiC diode VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 AM08204v1 RDS(on) 2.0 1.5 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 1.0 ID=3.5A VGS=10V AM08205v1 E 100 10 1 0 20 RG( Ω) ( μJ) 10 30 40 ID=4A VCL=400V VGS=10V Eon Eoff AM08206v1 BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 ID=1mA AM08203v1 |
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