NX3DV2567HR datasheet(6/20 Pages) NXP

Part #	NX3DV2567HR

Description	Low-ohmic four-pole double-throw analog switch

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Manufacturer	NXP [NXP Semiconductors]

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NX3DV2567

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Product data sheet

Rev. 1 — 28 September 2010

6 of 20

NXP Semiconductors

NX3DV2567

Low-ohmic four-pole double-throw analog switch

11.1 Test circuits

IS(OFF)

OFF-state

leakage

current

nY0 and nY1 port;

see Figure 5

VCC = 1.4 V to 3.6 V

-

±5-

±50

±500

nA

VCC = 3.6 V to 4.3 V

-

±10

-

±50

±500

nA

IS(ON)

ON-state

leakage

current

nZ port;

VCC = 1.4 V to 3.6 V;

see Figure 6

VCC = 1.4 V to 3.6 V

-

±5-

±50

±500

nA

VCC = 3.6 V to 4.3 V

-

±10

-

±50

±500

nA

ICC

supply current

VI =VCC or GND;

VSW =GND or VCC

VCC = 3.6 V

-

100

-

500

5000

nA

VCC = 4.3 V

-

150

-

800

6000

nA

ΔI

CC

additional

supply current

VSW =GND or VCC

VI = 2.6 V; VCC =4.3 V

-

2.0

4.0

-

7

μA

VI = 2.6 V; VCC = 3.6 V

-

0.35

0.7

-

1

μA

VI = 1.8 V; VCC = 4.3 V

-

7.0

10.0

-

15

μA

VI = 1.8 V; VCC =3.6 V

-

2.5

4.0

-

5

μA

VI = 1.8 V; VCC = 2.5 V

-

50

200

-

300

500

nA

CI

input

capacitance

-

1

---

-

pF

CS(OFF)

OFF-state

capacitance

supply path switch

-

35

-

pF

data path switch

-

3

-

pF

CS(ON)

ON-state

capacitance

supply path switch

-

130

-

pF

data path switch

-

16

-

pF

Table 7.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground 0 V).

Symbol Parameter

Conditions

Tamb = 25 °C

Tamb = −40 °C to +125 °C

Unit

Min

Typ

Max

Min

Max

(85

°C)

Max

(125

°C)

VI =0.3 V orVCC − 0.3 V; VO =VCC − 0.3 V or 0.3 V.

Fig 5.

Test circuit for measuring OFF-state leakage current

IS

001aam599

VI

VO

S

nZ

GND

nY0

VIL or VIH

nY1

switch

1

2

S

switch

VIH

1

VIL

2

VCC

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