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NX3DV2567HR Datasheet(PDF) 6 Page - NXP Semiconductors |
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NX3DV2567HR Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 20 page NX3DV2567 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 28 September 2010 6 of 20 NXP Semiconductors NX3DV2567 Low-ohmic four-pole double-throw analog switch 11.1 Test circuits IS(OFF) OFF-state leakage current nY0 and nY1 port; see Figure 5 VCC = 1.4 V to 3.6 V - - ±5- ±50 ±500 nA VCC = 3.6 V to 4.3 V - - ±10 - ±50 ±500 nA IS(ON) ON-state leakage current nZ port; VCC = 1.4 V to 3.6 V; see Figure 6 VCC = 1.4 V to 3.6 V - - ±5- ±50 ±500 nA VCC = 3.6 V to 4.3 V - - ±10 - ±50 ±500 nA ICC supply current VI =VCC or GND; VSW =GND or VCC VCC = 3.6 V - - 100 - 500 5000 nA VCC = 4.3 V - - 150 - 800 6000 nA ΔI CC additional supply current VSW =GND or VCC VI = 2.6 V; VCC =4.3 V - 2.0 4.0 - 7 7 μA VI = 2.6 V; VCC = 3.6 V - 0.35 0.7 - 1 1 μA VI = 1.8 V; VCC = 4.3 V - 7.0 10.0 - 15 15 μA VI = 1.8 V; VCC =3.6 V - 2.5 4.0 - 5 5 μA VI = 1.8 V; VCC = 2.5 V - 50 200 - 300 500 nA CI input capacitance - 1 --- - pF CS(OFF) OFF-state capacitance supply path switch - 35 - - - - pF data path switch - 3 - - - - pF CS(ON) ON-state capacitance supply path switch - 130 - - - - pF data path switch - 16 - - - - pF Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter Conditions Tamb = 25 °C Tamb = −40 °C to +125 °C Unit Min Typ Max Min Max (85 °C) Max (125 °C) VI =0.3 V orVCC − 0.3 V; VO =VCC − 0.3 V or 0.3 V. Fig 5. Test circuit for measuring OFF-state leakage current IS 001aam599 VI VO S nZ GND nY0 VIL or VIH nY1 switch 1 2 S switch VIH 1 VIL 2 VCC |
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