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ESH3B Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # ESH3B
Description  3.0AMPS Surface Mount Super Fast Rectifiers
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

ESH3B Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  ESH3B Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd ESH3B Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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CREAT BY ART
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain rellef, Ideal for automated place ment
Ideal for automated placement
Easy pick and place
Super fast recovery time for high efficiency
Qualifited as per AEC-Q101
ESH3X = Specific Device Code
G
= Green Compound
Y
= Year
M
= Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
Unit
VRRM
V
VRMS
V
VDC
V
IF(AV)
A
Trr
nS
Cj
pF
TJ
OC
TSTG
OC
45
uA
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
25
Maximum Reverse Current @ Rated VR TA=25 ℃
T A=125 ℃
IR
150
Mechanical Data
High temperature soldering:
260℃/10 seconds at terminals
Typical Thermal Resistance
RθjA
RθjL
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Maximum DC Blocking Voltage
47
12
OC/W
Packing: 16mm tape per EIA STD RS-481
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
5
Features
Weight: 0.21 grams
Type Number
Maximum Average Forward Rectified Current
ESH3B
ESH3C
ESH3B - ESH3D
3.0AMPS Surface Mount Super Fast Rectifiers
Marking Diagram
SMC/DO-214AB
Dimensions in inches and (millimeters)
125
Version:B11
- 55 to + 175
Note 2: Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Operating Temperature Range
Storage Temperature Range
- 55 to + 175
100
ESH3D
70
100
150
105
150
200
V
Maximum Instantaneous Forward Voltage (Note 1)
@ 3 A
VF
140
200
A
0.90
3
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load
IFSM
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE


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