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TSM6963SDCARV Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM6963SDCARV Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  TSM6963SD 20V Dual P-Channel MOSFET 2/6 Version: C09 Electrical Specifications (Ta =25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0V, ID =-250uA BVDSS -20 -- -- V Gate Threshold Voltage VDS =VGS, ID =-250uA VGS(TH) -0.5 -0.7 -1.0 V Zero Gate Voltage Drain Current VDS =-16V, VGS =0V IDSS -- -- -1 uA Gate Body Leakage VGS =±12V, VDS =0V IGSS -- -- ±100 nA On-State Drain Current VDS =-5V, VGS =-4.5V ID(ON) -25 -- -- A Drain-Source On-State Resistance VGS =-4.5V, ID =-4.5A RDS(ON) -- 23 30 m VGS =-2.5V, ID =-3A -- 30 42 VGS =-1.8V, ID =-2A -- 45 68 Forward Transconductance VDS =-5V, ID =-4.5A gfs -- 16 -- S Diode Forward Voltage IS =-0.5A, VGS =0V VSD -- - 0.8 -1.3 V Dynamic b Total Gate Charge VDS =-10V, ID =-4.5A, VGS =-4.5V Qg -- 14 20 nC Gate-Source Charge Qgs -- 2.1 10 Gate-Drain Charge Qgd -- 4.7 -- Input Capacitance VDS =-10V, VGS =0V, f =1.0MHz Ciss -- 1500 -- pF Output Capacitance Coss -- 220 -- Reverse Transfer Capacitance Crss -- 160 -- Switching b,C Turn-On Delay Time VDD =-10V, RL =10 , ID =-1A, VGEN =-4.5V, RG =6 td(on) -- 6 11 nS Turn-On Rise Time tr -- 13 23 Turn-Off Delay Time td(off) -- 86 145 Turn-Off Fall Time tf -- 42 70 Notes: a. pulse test: PW≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. |
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