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2N6849 Datasheet(PDF) 1 Page - Seme LAB |
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2N6849 Datasheet(HTML) 1 Page - Seme LAB |
1 / 3 page P-CHANNEL POWER MOSFET Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 3098 Issue 2 Page 1 of 3 IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (T C = 25°C unless otherwise stated) VDS Drain – Source Voltage -100V VDG Drain – Gate Voltage RGS = 20K -100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current Tc = 25°C -6.5A ID Continuous Drain Current Tc = 100°C -4.1A IDM Pulsed Drain Current (1) -25A PD Total Power Dissipation at Tc = 25°C 25W Derate Above 25°C 0.2W/°C EAS Single Pulse Avalanche Energy (2)(4) 500mJ TJ Junction Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 5 °C/W RθJA Thermal Resistance, Junction To Ambient 175 °C/W INTERNAL PACKAGE INDUCTANCE Symbols Parameters Typ. Units LS + LD Total Inductance 7 nH Notes Notes Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = -25V, Starting TJ = 25°C, L = 17.25mH, Peak IL = -6.5A, VGS = -10V (3) Pulse Width ≤ 300us, δ ≤ 2% (4) By Design Only, Not A Production Test. |
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