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IRFN130SMD05 Datasheet(PDF) 2 Page - Seme LAB |
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IRFN130SMD05 Datasheet(HTML) 2 Page - Seme LAB |
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2 / 2 page  IRF130SMD05N IRFN130SMD05 Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 10/00 Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 7A VGS = 10V ID = 11A VDS = VGS ID = 250mA VDS ³ 15V IDS = 7A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 11A VDS = 0.5BVDSS ID = 11A VDS = 0.5BVDSS VDD = 50V ID = 11A RG = 7.5W IS = 11A TJ = 25°C VGS = 0 IS = 11A TJ = 25°C di / dt £ 100A/msVDD £ 50V ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise stated) Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain – Source On–State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 100 0.1 0.19 0.22 24 3 25 250 100 -100 650 240 44 12.8 28.5 1.0 6.3 3.8 16.6 30 75 40 45 11 43 1.5 300 3 8.7 8.7 V V/°C W V S( W mA nA pF nC nC ns A V ns mC nH BVDSS DBVDSS DTJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS STATIC ELECTRICAL RATINGS DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE CHARACTERISTICS Internal Drain Inductance (from 6mm down drain lead pad to centre of die) Internal Source Inductance (from 6mm down source lead to centre of source bond pad) PACKAGE CHARACTERISTICS |
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