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TSM8N70 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM8N70 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page  TSM8N70 700V N-Channel Power MOSFET 2/8 Version: A10 Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 700 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 4A RDS(ON) -- 0.75 0.85 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 700V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±10 uA Forward Transfer Conductance VDS = 10V, ID = 4A gfs -- 11 -- S Dynamic b Total Gate Charge VDS = 560V, ID = 8A, VGS = 10V Qg -- 32 -- nC Gate-Source Charge Qgs -- 9 -- Gate-Drain Charge Qgd -- 8 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 2006 -- pF Output Capacitance Coss -- 148 -- Reverse Transfer Capacitance Crss -- 13.7 -- Switching c Turn-On Delay Time VGS = 10V, ID = 10A, VDD = 300V, RG =25 td(on) -- 23 -- nS Turn-On Rise Time tr -- 69 -- Turn-Off Delay Time td(off) -- 144 -- Turn-Off Fall Time tf -- 77 -- Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in the MOSFET IS -- -- 8 A Source Current (Pulse) ISM -- -- 32 A Diode Forward Voltage IS = 8A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time VGS = 0V, IS =8A, dIF/dt = 100A/us tfr -- 420 -- nS Reverse Recovery Charge Qfr -- 4.2 -- uC Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=8A, L=7.74mH, RG =25 , Starting TJ=25ºC Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 4: Essentially Independent of Operating Temperature |
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