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LRS1338A Datasheet(PDF) 5 Page - Sharp Corporation

Part # LRS1338A
Description  Stacked Chip 8M Flash Memory and 2M SRAM
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Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

LRS1338A Datasheet(HTML) 5 Page - Sharp Corporation

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Stacked Chip (8M Flash & 2M SRAM)
LRS1338A
Data Sheet
5
DC ELECTRICAL CHARACTERISTICS
TA = -40°C to + 85°C, VCC = 2.7 V to 3.6 V
NOTES:
1. This value is read current (ICCR + IPPR) of flash memory.
2. Sampled but not 100% tested.
3. This value is operation current (ICCW + IPPW) of flash memory.
4. This value is operation current (ICCE + IPPE) of flash memory.
5. This value is operation current (ICC1) of SRAM.
6. This value is standby current (ICCS + IPPS) of flash memory.
7. This value is deep power down current (ICCD + IPPD) of
flash memory.
8. This value is standby current (ISB1) of SRAM
9. This value is standby current (ISB) of SRAM.
10. Reference values at VCC = 3.0 V and TA = +25°C
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX. UNIT NOTES
Input leakage current
ILI
VIN = 0V to VCC
-1.5
1.5
µA
Output leakage current
ILO
F-CE, S-CE = VIH or F-OE, S-OE = VIH or
F-WE, S-WE = VIH, VI/O = 0 V to VCC
-1.5
1.5
µA
Operating supply
current
ICC
Read current, F-VPP ≤ F-VCC,
F-CE
≤ 0.2 V, V
IN ≥ VCC – 0.2 V or
VIN ≤ 0.2 V
tCYCLE = 200 ns, II/O = 0 mA
25
mA
1
Summation of VCC Byte Write or set lock-bit cur-
rent, and VPP Byte Write or set lock-bit current.
F-VCC ≥ 3.0 V
57
mA
2, 3
Summation of VCC Block Erase or Clear Block
lock-bits current, and VPP Block Erase or Clear
Block lock-bits current. F-VCC ≥ 3.0 V
42
mA
2, 4
ICC
S-CE = 0.2 V, VIN ≥ VCC – 0.2 V or VIN ≥ 0.2 V
tCYCLE = 200 ns, II/O = 0 mA
25
mA
5
Standby current
ISB
F-CE = VIH, RP = VIH
2.0
mA
6
F-CE
≥ V
CC – 0.2 V, RP ≤ 0.2 V
20
µA
7
ISB
S-CE = VIH
3.0
mA
8
S-CE
≥ V
CC – 0.2 V
0.6
40
µA
9, 10
Output voltage
VOL,
VOH
IOL = 2.0 mA
0.4
V
IOH = 1.0 mA
2.4
V


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