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TSM1N80CWRP Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM1N80CWRP Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 9 page  TSM1N80 800V N-Channel MOSFET 2/9 Version: A10 Electrical Specifications (Ta=25 oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA BVDSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.15A RDS(ON) -- 18 21.6 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 3 -- 5 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 25 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±10 uA Forward Transconductance VDS =40V, ID = 0.1A gfs -- 0.36 -- S Diode Forward Voltage IS = 0.2A, VGS = 0V VSD -- -- 1.4 V Dynamic b Total Gate Charge VDS = 640V, ID = 0.3A, VGS = 10V Qg -- 5 6 nC Gate-Source Charge Qgs -- 1 -- Gate-Drain Charge Qgd -- 2 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 155 200 pF Output Capacitance Coss -- 20 26 Reverse Transfer Capacitance Crss -- 2.7 4 Switching c Turn-On Delay Time VGS = 10V, ID = 0.3A, VDS = 400V, RG = 25 td(on) -- 10 30 nS Turn-On Rise Time tr -- 20 50 Turn-Off Delay Time td(off) -- 16 45 Turn-Off Fall Time tf -- 25 60 Note 1: Pulse test: pulse width <=300uS, duty cycle <=2% Note 2: (VDD = 50V, IAS=0.8A, L=170mH, RG=25 ) Note 3: For design reference only, not subject to production testing. Note 4: Switching time is essentially independent of operating temperature. |
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