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TSD1664CYRM Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD1664CYRM Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSD1664 Low Vcesat NPN Transistor 1/4 Version: B07 SOT-89 PRODUCT SUMMARY BVCEO 32V BVCBO 40V IC 1A VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA Features ● Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.) ● Complementary part with TSB1132 Structure ● Epitaxial Planar Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSD1664CY RM SOT-89 1Kpcs / 7” Reel TSD1664CY RMG SOT-89 1Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V DC 1 Collector Current Pulse IC 2 (note1) A 0.5 Collector Power Dissipation PD 2 (note 2) W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw=20ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 40 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 32 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 5 -- -- V Collector Cutoff Current VCB = 20V, IE = 0 ICBO -- -- 0.5 uA Emitter Cutoff Current VEB = 4V, IC = 0 IEBO -- -- 0.5 uA Collector-Emitter Saturation Voltage IC / IB = 500mA / 50mA VCE(SAT) -- 0.15 0.4 V DC Current Transfer Ratio VCE = 3V, IC = 100mA hFE 120 -- 390 Transition Frequency VCE =5V, IC=-50mA, f=100MHz fT 50 150 -- MHz Output Capacitance VCB = 10V, IE = 0, f=1MHz Cob -- 10 20 pF hFE values are classified as follows: Rank Q R hFE 120~270 180~390 Pin Definition: 1. Base 2. Collector 3. Emitter |
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