TSC742A datasheet(2/6 Pages) TSC

Part #	TSC742A

Description	High Voltage NPN Transistor

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Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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2 / 6 page

TSC742A

High Voltage NPN Transistor

2/6

Version: A11

Electrical Specifications (TA = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC =0.5mA

BVCBO

950

--

V

Collector-Emitter Breakdown Voltage

IC =5mA

BVCEO

400

--

V

Emitter-Base Breakdown Voltage

IE =1mA

BVEBO

15

--

V

Collector Cutoff Current

VCE =400V, IB=0

ICEO

--

10

uA

Collector Cutoff Current

VCB =950V, IE =0

ICBO

--

10

uA

Collector-Emitter Saturation Voltage

IC=1A, IB =0.2A

VCE(SAT)1

---

--

0.5

V

Collector-Emitter Saturation Voltage

IC=3.5A, IB =1A

VCE(SAT)2

---

--

1.5

V

Base-Emitter Saturation Voltage

IC=3.5A, IB =1A

VBE(SAT)1

--

1.5

V

DC Current Gain

VCE =5V, IC = 0.1A

VCE =5V, IC = 0.5A

VCE =3V, IC = 0.8A

hFE

35

25

--

100

--

50

Resistive Load Switching Time (Ratings)

Rise Time

VCC =125V, IC =2A,

IB1=-IB2=-0.4A,

tP =300uS, VBE(OFF) =-5V

tr

0.17

2

uS

Storage Time

tSTG

--

6

uS

Fall Time

tf

--

0.5

uS

Notes: Pulsed duration =380uS, duty cycle ≤2%

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