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TSB1424CXRF Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSB1424CXRF Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TSB1424 Low Vcesat PNP Transistor 1/5 Version: E11 SOT-89 SOT-23 PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE(SAT) -0.2V @ IC / IB = -2A / -100mA Features ● Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) ● Complementary part with TSD2150 Ordering Information Part No. Package Packing TSB1424CY RM SOT-89 1Kpcs / 7” Reel TSB1424CY RMG SOT-89 1Kpcs / 7” Reel TSB1424CX RF SOT-23 3Kpcs / 7” Reel TSB1424CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit SOT-89 SOT-23 Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current DC IC -3 A Pulse -5 (note1) Collector Power Dissipation PD 0.6 0.3 W 2 (note 2) 1 (note 2) Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -20 -- -- V Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 BVCEO -20 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -6 -- -- V Collector Cutoff Current VCB = -20V, IE = 0 ICBO -- -- -0.1 uA Emitter Cutoff Current VEB = -5V, IC = 0 IEBO -- -- -0.1 uA Collector-Emitter Saturation Voltage IC / IB = -2A / -100mA VCE(SAT) -- -0.2 -0.5 V DC Current Transfer Ratio VCE = -2V, IC = 100mA hFE 180 -- 390 Transition Frequency VCE =-2V, IE=0.5A, f=100MHz fT -- 200 -- MHz Output Capacitance VCB = -10V, IE = 0, f=1MHz Cob -- 28 -- pF Pin Definition: 1. Base 2. Collector 3. Emitter |
Similar Part No. - TSB1424CXRF |
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