BDS14SMD datasheet(2/2 Pages) SEME-LAB

Part #	BDS14SMD

Description	SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Document Number 3255

Issue 3

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

BDS13 BDS13SMD

BDS13SMD05

BDS14 BDS14SMD

BDS14SMD05

BDS15 BDS15SMD

BDS15SMD05

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BDS13

VCB = - 60V

BDS14

VCB = - 80V

BDS15

VCB = - 100V

BDS13

VCE = - 30V

BDS14

VCE = - 40V

BDS15

VCE = - 50V

VEB = - 5V

BDS13

BDS14

IC = - 100mA

BDS15

IC = - 5A

IB = - 0.5A

IC = - 10A IB = - 2.5A

IC = - 5A

VCE = - 4V

IC = - 0.5A VCE = - 4V

IC = - 5A

VCE = - 4V

IC = - 10A VCE = - 4V

IC = - 0.5A VCE = - 4V

f = 1MHz

- 500

- 1.0

- 60

- 80

- 100

- 1.0

- 3

- 2.5

- 1.5

40

300

15

150

5

3

µA

mA

V

MHz

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

*Pulsed : Pulse duration = 300

µs , duty cycle = 1.5%

Parameter

Test Conditions

Max.

Unit

ton

ts

tr

On Time

(td + tr)

Storage Time

Fall Time

IC = - 4A VCC = - 30V IB1 = - 0.4A

IC = - 4A

VCC = - 30V

IB1 = –IB2 = 0.4A

0.7

1.0

0.8

µs

SWITCHING CHARACTERISTICS

Test Conditions

Max.

Unit

RθJ-C

Thermal Resistance Junction to Case

4.0

°C/W

ICBO

ICEO

IEBO

VCEO(sus)*

VCE(sat)*

VBE(sat)*

VBE*

hFE*

fT

Collector cut-off current

(IE = 0)

Collector cut-off current

(IB = 0)

Emitter cut-off current

(IC = 0)

Collector - Emitter

sustaining voltage (IB = 0)

Collector - Emitter

saturation voltage

Base - Emitter

saturation voltage

Base - Emitter voltage

DC Current Gain

Transition frequency

THERMAL CHARACTERISTICS

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