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RB520S-30 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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RB520S-30 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page RB520S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Case : SOD-523F small outline plastic package Min Max Min Max 0.70 0.90 0.028 0.035 1.50 1.70 0.059 0.067 0.25 0.40 0.010 0.016 1.10 1.30 0.043 0.051 0.60 0.70 0.024 0.028 0.10 0.14 0.004 0.006 Part No. Packaging Code Package Packing Marking RB520S-30 RK SOD-523F 3K / 7" Reel B RB520S-30 RKG SOD-523F 3K / 7" Reel B Maximum Ratings Note 1: Test Condition: 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) SOD-523F Maximum Ratings and Electrical Characteristics Features Mechanical Data Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code High temperature soldering guaranteed: 260°C/10s C D mW A V 30 200 Reverse Voltage VR VRRM Power Dissipation Repetitive Peak Reverse Voltage PD Units Symbol Suggested PAD Layout Polarity : Indicated by cathode band Weight : 1.68±0.5 mg Rating at 25°C ambient temperature unless otherwise specified. Ordering Information Type Number E B0520LW Storage Temperature Range TJ,TSTG Mean Forward Current @ TL=100℃ (Lead Temperature) Thermal Resistance (Junction to Ambient) IO RθJA Non-Repetitive Peak Forward Surge Current (Note 1) IFSM -55 to + 125 °C V 1 mA °C/W 500 30 200 Pin Configuration Marking Code: B Dimensions F Unit (inch) A B Unit (mm) D A B C E F Version :A11 |
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