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BAS316WS Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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BAS316WS Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 3 page BAS316WS 200mW, High-speed switching SMD Diode Small Signal Diode Rating and Characteristic Curves FIG 1 Typical Forward Characteristics 0 25 50 75 100 125 150 175 200 225 250 275 300 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 FIG 3 Admissible Power Dissipation Curve 0 50 100 150 200 250 0 25 50 75 100 125 150 175 FIG 4 Typical Junction Capacitance 0 0.2 0.4 0.6 0.8 02 46 8 10 12 14 16 Ta=25°C Ambient Temperature (°C) Reverse Voltage (V) Ta=25°C FIG 2 Reverse Current as a function of junction temperature. 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 160 180 200 VR=75V max Junction Temperature ( oC) Instantaneous Forward Voltage (V) VR=75V typ typ VR=25V Version : A10 |
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