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RF3023SR Datasheet(PDF) 1 Page - RF Micro Devices |
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RF3023SR Datasheet(HTML) 1 Page - RF Micro Devices |
1 / 5 page Features 1 of 5 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS RF3023 BROADBAND MEDIUM POWER SPDT SWITCH The RF3023 is a GaAs pHEMT single-pole double-throw (SPDT) switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capa- bility. The RF3023 is ideally suited for battery-powered and low control voltage applications. 300kHz to 4GHz Operation 0.25dB Insertion Loss at 1GHz 26dB Isolation at 2GHz 1.8V Minimum Control Volt- age 28dBm P0.1dB at 3V 18dBm P0.1dB at 1.8V 58dBm IP3 at 3V Applications Cellular Handset Applications Antenna Tuning Applications IEEE 802.11b/g WLAN Appli- cations Cellular Infrastructure Appli- cations DS101111 Package: SC70, 6-Pin RF3023 Parameter Specification Unit Condition Min. Typ. Max. Insertion Loss 0.25 dB 1GHz 0.3 0.4 dB 2GHz 0.45 dB 3GHz VSWR 1.15 1GHz 1.2 2GHz 1.33 3GHz Isolation 26 dB 1GHz 22 26 dB 2GHz 27 dB 3GHz P1dB 31 dBm 1GHz 32 dBm 2GHz P0.1dB 28 dBm 1GHz IP3 60 dBm 1GHz, 1MHz Spacing, 15dBm per tone 58 dBm 2GHz, 1MHz Spacing, 15dBm per tone TON, TOFF 40 nS 50% of VCTRL to 10/90% of RF TRISE, TFALL 30 nS 10/90% RF Test Conditions: 3.0V, 50 , 25°C, with Application Circuit shown herein. |
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