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TT8M1 Datasheet(PDF) 1 Page - Rohm |
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TT8M1 Datasheet(HTML) 1 Page - Rohm |
1 / 9 page www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. 1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). Application Switching Packaging specifications Inner circuit Package Taping Code TR Basic ordering unit (pieces) 3000 TT8M1 Absolute maximum ratings (Ta = 25 C) Tr1 : N-ch Tr2 : P-ch Drain-source voltage VDSS 20 20 V Gate-source voltage VGSS 10 10 V Continuous ID 2.5 2.5 A Pulsed IDP 10 10 A Continuous Is 0.8 0.8 A Pulsed Isp 10 10 A W / TOTAL W / ELEMENT Channel temperature Tch C Range of storage temperature Tstg C *1 Pw 10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol Type Source current (Body Diode) Drain current Parameter Unit Limits 1 150 Power dissipation PD 1.25 55 to +150 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE *1 *2 *1 Abbreviated symbol :M01 TSST8 (1) (2) (3) (4) (8) (7) (6) (5) 1/8 2010.08 - Rev.A |
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