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TT8M1 Datasheet(PDF) 1 Page - Rohm

Part # TT8M1
Description  1.5V Drive Nch Pch MOSFET
Download  9 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

TT8M1 Datasheet(HTML) 1 Page - Rohm

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10 ROHM Co., Ltd. All rights reserved.
1.5V Drive Nch + Pch MOSFET
TT8M1
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
Application
Switching
Packaging specifications
Inner circuit
Package
Taping
Code
TR
Basic ordering unit (pieces)
3000
TT8M1
Absolute maximum ratings (Ta = 25
C)
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage
VDSS
20
20
V
Gate-source voltage
VGSS
10
10
V
Continuous
ID
2.5
2.5
A
Pulsed
IDP
10
10
A
Continuous
Is
0.8
0.8
A
Pulsed
Isp
10
10
A
W / TOTAL
W / ELEMENT
Channel temperature
Tch
C
Range of storage temperature
Tstg
C
*1 Pw
10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
Type
Source current
(Body Diode)
Drain current
Parameter
Unit
Limits
1
150
Power dissipation
PD
1.25
55 to +150
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
*1
*2
*1
Abbreviated symbol :M01
TSST8
(1)
(2)
(3)
(4)
(8)
(7)
(6)
(5)
1/8
2010.08 - Rev.A


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