SH8M70_10 datasheet(4/8 Pages) ROHM

Part #	SH8M70

Description	10V Drive NchPch MOSFET

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Manufacturer	ROHM [Rohm]

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2010.06 - Rev.B

Data Sheet

SH8M70

N-ch



Electrical characteristic curves

1

10

100

1000

0.01

0.1

1

10

100

1000

Drain-Source Voltage : VDS(V)

Ciss

Coss

Crss

f=1MHz

VGS=0V

Ta=25

°C

Pulsed

Fig.1 Typical Capacitance vs.

Drain-Source Voltage

1

10

100

1000

10000

0.01

0.1

1

10

Drain Current : ID(A)

td(off)

tf

tr

td(on)

Ta=25

°C

VDD=125V

VGS=10V

RG=10

Ω

Pulsed

Fig.2 Switching Characteristics

1

10

100

1000

0.1

1

10

Reverse Drain Current : IDR(A)

Fig.3 Reverse Recovery Time vs.

Reverse Drain Current

Ta=25

°C

di/dt=100A/

μs

VGS=0V

Pulsed

0

5

10

15

01234567

Total Gate Charge : Qg(nC)

Ta=25

°C

VDD=125V

ID=3A

Pulsed

Fig.4 Dynamic Input Characteristics

0.01

0.1

1

10

02

4

8

6

Gate-Source Voltage : VGS (V)

Ta=-25

°C

25

°C

75

°C

125

°C

VDS=10V

Pulsed

Fig.5 Typical Transfer

Characteristics

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

Gate-Source Voltage : VGS(V)

ID=3A

1.5A

Ta=25

°C

Pulsed

Fig.6 Static Drain-Source On-State

Resistance vs.Gate-Source Voltage

0.1

1

10

0

0.2

0.4

0.6

0.8

1

1.2

Source-Drain Voltage : VSD(V)

Ta=-25

°C

25

°C

75

°C

125

°C

VGS=0V

Pulsed

Fig.7 Source Current vs.

Source-Drain Voltage

0.1

1

10

0.1

1

10

Drain Current : ID(A)

Ta=125

°C

75

°C

25

°C

-25

°C

VGS=10V

Pulsed

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

150

75

100 125

Temperature : Tch (

°C)

VGS=10V

Pulsed

ID=3.0A

1.5A

Fig.9 Static Drain-Source On-State

Resistance vs. Channel Temperature

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