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Data Sheet

RW1E025RP

　



Electrical characteristics (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

--

10

30

-

-

V

Zero gate voltage drain current

--

1

Gate threshold voltage

1.0

-

2.5

V

-55

75

-

85

115

-

95

125

Forward transfer admittance

1.5

-

-

S

Input capacitance

-

480

-

pF

Output capacitance

-

70

-

pF

Reverse transfer capacitance

-

70

-

pF

f=1MHz

Turn-on delay time

-7

-

ns

Rise time

-

12

-

ns

Turn-off delay time

-

50

-

ns

Fall time

-

22

-

ns

Total gate charge

-

5.2

-

Gate-source charge

-

1.6

-

Gate-drain charge

-

1.6

-

*Pulsed



Body diode characteristics (Source-Drain) (Ta = 25

C)

Symbol

Min.

Typ.

Max. Unit

Forward Voltage

--

1.2

V

*Pulsed

Conditions

Conditions

m



Parameter

Parameter

Static drain-source on-state

resistance

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

*

********

*

*

*

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2011.03 - Rev.A