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LH52256C Datasheet(PDF) 4 Page - Sharp Electrionic Components

Part No. LH52256C
Description  CMOS 256K (32K x 8) Static RAM
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Maker  SHARP [Sharp Electrionic Components]
Homepage  http://sharp-world.com/
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 4 page
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DC ELECTRICAL CHARACTERISTICS (TA = 0°C to +70°C, VCC = 4.5 V to 5.5 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input leakage
current
ILI
VIN = 0 V to VCC
–1.0
1.0
µA
Output leakage
current
ILO
CE = VIH or OE = VIH
VI/O = 0 V to VCC
–1.0
1.0
µA
Operating supply
current
ICC
Minimum cycle, VIN = VIL or VIH
II/O = 0 mA, CE = VIL
25
45.0
mA
ICC1
tRC, tWC = 1 µs, VIN = VIL or VIH,
II/O = 0 mA, CE = VIL

10.0
Standby current
ISB
CE
≥ VCC – 0.2 V
0.6
40.0
µA
ISB1
CE = VIH

3.0
mA
Output voltage
VOL
IOL = 2.1 mA

0.4
V
VOH
IOH = -1.0 mA
2.4

NOTE:
Typical values at VCC = 5.0 V, TA = 25°C
AC ELECTRICAL CHARACTERISTICS
AC Test Conditions
PARAMETER
MODE
NOTE
Input pulse level
0.6 V to 2.4 V
Input rise and fall time
10 ns
Input and output timing Ref. level
1.5 V
Output load
1 TTL + CL (100 pF)
1
NOTE:
1.
Including scope and jig capacitance.
READ CYCLE (TA = 0°C to +70°C, VCC = 4.5 V to 5.5 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Read cycle time
tRC
70
ns
Address access time
tAA
70
ns
CE access time
tACE
70
ns
Output enable to output valid
tOE
35
ns
Output hold from address change
tOH
10
ns
CE Low to output active
tLZ
10
ns
1
OE Low to output active
tOLZ
5
ns
1
CE High to output in High impedance
tHZ
030
ns
1
OE High to output in High impedance
tOHZ
030
ns
1
NOTES:
1.
Active output to high-impedance and high-impedance to output active tests specified for a
±200 mV
transition from steady state levels into the test load.
LH52256C/CH
CMOS 256K (32K
× 8) Static RAM
4




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